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Search on :	LOPEZ-LOPEZ, M. [Author]
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Sánchez-Trujillo, D.J. et al. Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots. Superf. vacío, Dec 2017, vol.30, no.4, p.56-60. ISSN 1665-3521

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Pulzara-Mora, C.A. et al. Caracterización de capas de GaAs y GaAsMn depositadas por magnetron sputtering. Superf. vacío, Set 2016, vol.29, no.3, p.98-104. ISSN 1665-3521

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Pulzara-Mora, A. et al. Structural, optical and morphological properties of In_xGa_1-xAs layers obtained by RF magnetron sputtering. Superf. vacío, June 2016, vol.29, no.2, p.32-37. ISSN 1665-3521

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Figueroa-Reina, T. et al. Estudio del tiempo característico de llenado de trampas en GaAs y en puntos cuánticos de InAs por medio del análisis de espectros de fotorreflectancia. Superf. vacío, 2015, vol.28, no.1, p.1-4. ISSN 1665-3521

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Velásquez-Arriaga, A. et al. Electronic transitions in single and double quantum wells made of III-V compound semiconductors. Superf. vacío, 2013, vol.26, no.4, p.126-130. ISSN 1665-3521

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Pulzara-Mora, A. et al. Characterization of optical and structural properties of GaAsN layers grown by Molecular Beam Epitaxy. Superf. vacío, 2005, vol.18, no.3, p.27-32. ISSN 1665-3521

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Méndez-García, V.H. et al. Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots. Superf. vacío, 2005, vol.18, no.2, p.1-6. ISSN 1665-3521

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Solís-Cisneros, H. I. et al. Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection. Rev. mex. fis., Apr 2022, vol.68, no.2. ISSN 0035-001X

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Rojas-Trigos, J.B. et al. Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates. Rev. mex. fis., Feb 2016, vol.62, no.1, p.68-72. ISSN 0035-001X

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Yee-Rendón, C.M., López-López, M. and Meléndez-Lira, M. Influence of indium segregation on the light emission of piezoelectric InGaAs/GaAs quantum wells grown by molecular beam epitaxy. Rev. mex. fis., 2004, vol.50, no.2, p.193-199. ISSN 0035-001X

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