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ROSALES, P. [Author]
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Molina, J. et al.
Memristance effect of metal-insulator-metal structures using Al
2
O
3
film as active layer for
emergent memory devices
.
Superf. vacío
, 2014, vol.27, no.1, p.1-6. ISSN 1665-3521
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abstract in english
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Obregón, O. et al.
Transistores de película delgada basados en óxido de Zinc por spray pyrolysis ultrasónico de alta frecuencia a baja temperatura
.
Rev. mex. fis.
, Ago 2021, vol.67, no.4. ISSN 0035-001X
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abstract in spanish
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Domínguez, M.A. et al.
Impact of planarized gate electrode in bottom-gate thin-film transistors
.
Rev. mex. fis.
, June 2016, vol.62, no.3, p.223-228. ISSN 0035-001X
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Dominguez, M., Rosales, P. and Torres, A.
Electrical characterization of planarized a-SiGe:H Thin-film Transistors
.
Rev. mex. fis.
, Feb 2013, vol.59, no.1, p.62-65. ISSN 0035-001X
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abstract in english
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