Abstract

LOMBARDI, R.M; ARAGON, R  and  CINSO- CONICET-CITEFA. Chemical sensitivity of Mo gate MOS capacitors. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.11-13. ISSN 0035-001X.

Mo gate MOS capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 10¹¹ cm^-2e-v^-1, in pure nitrogen, to 2.5 10¹¹cm^-2e-v^-1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature.

Keywords : MOS device; Mo gate; hydrogen sensitivity.