SciELO - Scientific Electronic Library Online

 
vol.52 suppl.2Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applicationsDesign of a JFET and radiation PIN detector integrated on a high resistivity silicon substrate using a high temperature process author indexsubject indexsearch form
Home Pagealphabetic serial listing  

Services on Demand

Journal

Article

Indicators

Related links

  • Have no similar articlesSimilars in SciELO

Share


Revista mexicana de física

Print version ISSN 0035-001X

Abstract

REHDER, G  and  CARRENO, M.N.P. Ciliary motion in PECVD silicon carbide and silicon oxynitride microstructures. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.48-49. ISSN 0035-001X.

The development of arrays of amorphous hydrogenated silicon carbide (a-SiC:H) and silicon oxynitride (SiOxNy) based microstructures that produce ciliary motion is presented. The arrays are fabricated by bulk micromachining of c-Si substrates and they are completely based on materials obtained by a low temperature PECVD (plasma enhanced chemical vapor deposition) technique. Chromium metal is sandwiched between these two materials and it is used as a contact metal and heating element. The ciliary motion is obtained by applying an external synchronized electrical voltage to the cantilevers, which move due to thermal expansion caused by the Joule Effect.

Keywords : MEMS; silicon carbide; Joule effect.

        · abstract in Spanish     · text in English

 

Creative Commons License All the contents of this journal, except where otherwise noted, is licensed under a Creative Commons Attribution License