Services on Demand
Journal
Article
Indicators
Cited by SciELO
Access statistics
Related links
Similars in SciELO
Share
Revista mexicana de física
Print version ISSN 0035-001X
Abstract
ALBERTIN, K.F and PEREYRA, I. One step a-Si: H TFT'S with PECVD SiOxNy gate insulator. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.83-85. ISSN 0035-001X.
Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements.
Keywords : One mask step; silicon oxynitride; thin film transistors.