Abstract

POWER, Ch. et al. Absorción óptica a altas presiones del TLGaSe₂. Rev. mex. fis. [online]. 2010, vol.56, n.3, pp.217-222. ISSN 0035-001X.

In this paper the spectrum of optical normal transmission not polarized of TlGaSe₂ is measured as a function of pressure up to 27.6 GPa at room temperature. Our results show that in the range of the visible exist the contributions of two direct gaps of energy, which present a linear dependence with the pressure. The weak transition assigned to the fundamental gap of energy, decreases up to 1.5 GPa with a linear coefficien of -5.31 × l0 ^-2 eVGPa^-1 and the transition shows a coefficien of -9.95 × 10^-2 eVGPa^-1 up to 5.3 GPa (limit of pressure in the visible spectrum). The results in the infrared do not show the presence of the transition E_A allowing to see only the behavior of the second transition rightly up to the pressure of metallization 24.6 GPa. In the range of pressure studied from 0.0 to 27.6 GPa, the transition E_B shows a not linear behavior with the pressure of quadratic coefficien 1.83 × l0 ^-3 eVGPa ^-2.

Keywords : I-III-VI₂ semiconductor; optical properties; infrared; high pressure.

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