Instrumentación

 

TiO₂ and Al₂O₃ ultra thin nanolaminates growth by ALD; instrument automation and films characterization

 

H. Tiznado*, D. Domínguez, W. de la Cruz, R. Machorro, M. Curiel and G. Soto

 

Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, Ensenada, 22860, Baja California, México.*CNyN-UNAM, P.O. Box 439036, San Ysidro, CA, 92143-9036, USA. Tel: +52+ 646+1744602, Fax: +52+ 646+1744603

 

Recibido el 28 de octubre de 2011
Aceptado el 30 de agosto de 2012

 

Abstract

We report on the development of a fully operational atomic layer deposition (ALD) system. This system is computer-controlled and can deposit multilayered systems without user intervention. We describe the design of manifold, reaction chamber and exhaust. Additionally we give some features of the automatization software and electronics. To evaluate the ALD performance we used as precursor trymethyl aluminum (TMA) and tetrakis (dimethylamino) titanium (TDMAT) to deposit Al₂O₃ and TiO₂, respectively, in nanolaminated film structures. The thicknesses and composition of the films are precisely controlled, as determined by spectroscopic ellipsometry, and the nanolaminates have a sharp interface as indicated by Auger depth profile.

Keywords: Atomic layer deposition; nanolaminates; instrumentation; automation; ellipsometry.

 

PACS: 07.30.Kf; 77.84.Bw

 

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Acknowledgments

This work was financially supported by CONACyT grants #83275 and #82984, and DGAPAIN114209-3. We acknowledge the technical assistance of A. Tiznado, E. Medina, J. Díaz and P. Pizá.

 

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