Instrumentación

 

Common-source cold-FET used to validate noise figure measurements and on-wafer FET noise parameters

 

B. E. Figueroa Reséndiz, M. C. Maya Sánchez, and J. A. Reynoso Hernández

 

Centro de Investigación Científica y de Educación Superior de Ensenada, División de Física Aplicada, Departamento de Electrónica y Telecomunicaciones, Carretera Ensenada-Tijuana No. 3918, Zona Playitas, 22860, Ensenada, B.C. México. e-mail: befiguer@cicese.mx; mcmaya@cicese.mx; apolinar@cicese.mx

 

Received 1 October 2012
Accepted 25 July 2013

 

Abstract

This work proposes the use of a common-source cold-FET with gate forward biased to validate the noise figure measurements and the noise parameters of on-wafer transistors. Since a common-source cold-FET behaves as an attenuator, its noise figure and noise parameters can be determined from S-parameters measurements. Three methods for determining the noise parameters of the common-source cold-FET are investigated. The first one uses the noise correlation matrix for passive devices (the S-parameters), the second one is the tuner method and the third one is the F₅₀ method. The noise figure measured and the noise figure computed from S-parameters agree quite well. The noise parameters extracted with the tuner method and the F₅₀ method show good correlation with the noise parameters computed with the S-parameters. These results validate both the noise figure measurements and the noise parameters extraction.

Keywords: Noise figure; noise parameters; cold-FET; source-pull tuner method; F₅₀ method.

 

PACS: 85.30.De; 06.20.fb; 84.40.Dc

 

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