Investigación

 

Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure

 

O. Oubram^a, I. Rodríguez-Vargas^b, and J. C. Martínez-Orozco^b

 

^a Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, México. Phone: +52 01 777329 7000 Ext. 7039; Fax: +52 01 777329 7000 Ext. 7039 e-mail: oubram@uaem.mx

^b Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, Zacatecas, Zac., 98060, Mexico.

 

Received 6 November 2013.
Accepted 17 February 2014.

 

Abstract

The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in δ-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities.

Keywords: Refractive index changes linear and nonlinear; hydrostatic pressure; δ-doped quantum wells.

 

PACS: 78.20.Ci; 73.21.Fg; 74.62.F; 78.67.De; 61.50.Ks

 

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