Abstract

MARIN, G.; RINCON, C.; WASIM, S. M.  and  SANCHEZ-PEREZ, G.. The fundamental absorption edge of CuGa₃Te₅ ordered defect semiconducting compound. Rev. mex. fis. [online]. 2017, vol.63, n.6, pp.593-596. ISSN 0035-001X.

The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa3Te5, a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P $\overline{4}$2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is $\mathrm{\theta }\approx 125$ K. This is comparable with 3/4 ${\mathrm{\theta }}_{\mathrm{D}}\approx 156$K, ${\mathrm{\theta }}_{\mathrm{D}}$ being the Debye temperature of the compound.

Keywords : Semiconductors; optical absorption; electronic band structure; 71.20.Nr.