Characterization by photoreflectance of E 0 ´ and E 1 silicon-like critical points in ion implanted Si 1-y C y thin films

Melendez-Lira, M.; Melendez-Lira, M.

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Superficies y vacío

Print version ISSN 1665-3521

Superf. vacío vol.18 n.3 Ciudad de México Sep. 2005

Articles

Characterization by photoreflectance of E ₀ ´ and E ₁ silicon-like critical points in ion implanted Si _1-y C _y thin films

M. Melendez-Lira^*

^{^*} Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 Mexico, D. F., México.

Abstract

The dependence of E₀´ and E₁ critical points energies with carbon content in Si_1-yC_y thin films grown by ion implantation and crystallization have been obtained by room temperature photoreflectance spectroscopy. We present results from samples crystallized by solid phase epitaxy and laser annealing. We found that the E₀´ values depend on the crystallization procedure. For solid phase epitaxy crystallization, E₀´ initially increases up to 20 meV for y=0.003 then decreasing to values near that of silicon for y =0.014. While for laser annealing the E₀´ values are always lower than that of silicon. E₀´ shows a behavior far from that predicted by the virtual crystal approximation and deformation potential theories. E₁ shows a continuous increase as function of the carbon content, this is reasonably well described using the aforementioned theories.

Keywords: Semiconductor alloys; Si_1-yC_y; Photoreflectance

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Received: July 10, 2005; Accepted: August 11, 2005

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