SciELO - Scientific Electronic Library Online

 
vol.18 issue3Infrared and Raman characterization of amorphous carbon nitride thin films prepared by laser ablationFundamentos teóricos de la optimización de la electrónica de medición para experimentos con técnicas fotopiroeléctricas author indexsubject indexsearch form
Home Pagealphabetic serial listing  

Services on Demand

Journal

Article

Indicators

Related links

  • Have no similar articlesSimilars in SciELO

Share


Superficies y vacío

Print version ISSN 1665-3521

Abstract

GALVAN-ARELLANO, M. et al. Estudio de las películas de paladio como barreras de difusión para contactos ohmicos en semiconductores III-V. Superf. vacío [online]. 2005, vol.18, n.3, pp.13-16. ISSN 1665-3521.

A method for the formation of ohmic contacts on GaSb and GaAs with a palladium diffusion barrier is reported. The results on the analysis of the semiconductor surfaces after the cleaning process and previous to the metallic film contact deposition are included. The method for the palladium film deposition on GaSb and GaAs semiconductors is reported. The capability of the palladium films as a diffusion barrier is demonstrated by the results of SIMS analysis realized by on the semiconductor/palladium-film/metallic-alloy structures.

Keywords : SIMS; AFM; Ohmics contacts, Paladium, Diffusion barrier; Semiconductors III-V; GaAs; GaSb.

        · abstract in Spanish     · text in Spanish     · Spanish ( pdf )