Abstract

TRIGUBO, A.B. et al. Calidad cristalina del ZnSe obtenido por transporte químico con I₂ como portador gaseoso. Superf. vacío [online]. 2007, vol.20, n.3, pp.21-25. ISSN 1665-3521.

The presence of dislocations was studied in single crystalline ZnSe grown by chemical transport using I₂ as gaseous carrier. The presence of defects was not determined in the micrometric and nanometric range employing transmission electronic microscopy in order to study larger material areas was used chemical etching. Dislocation density and adjacent subgrain misorientation were obtained by chemical etching using different reagents. Micrographic results were shown and compared to determine reagents relative advantages. The transmittance of ZnSe was measured using a Fourier transform infrared spectrometer. Commercial substrates used as windows have comparable results to our grown material wafers. This characterization proves that the semiconductor crystalline quality is appropriate for optical windows.

Keywords : ZnSe single crystal; II-VI semiconductors; Scanning electron microscopy; Trasmission electron microscopy; Chemical etching; Infrared transmission spectroscopy.