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Revista mexicana de física
versión impresa ISSN 0035-001X
Resumen
MISHURNYI, V.A.; GORBATCHEV, A. Yu.; DE ANDA, F. y NIETO-NAVARRO, J.. Influence of baking on the photoluminescence spectra of Ini1-xGaxAsyPi1-y solid solutions grown on Inp substrates. Rev. mex. fis. [online]. 2004, vol.50, n.3, pp.216-220. ISSN 0035-001X.
The influence of thermal treatments on the photoluminescence spectra of In1-xGaxAsy P1-y epitaxial layers of various compositions grown by LPE on InP substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking, their surface was covered by spin-on SiO2 layers. The photoluminescence spectra did not change for solid solutions whose compositions were near InP and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because the appearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whose compositions lie inside a theoretically predicted miscibility gap.
Palabras llave : InGaAsP; solid solution; miscibility gap; decomposition and photoluminescence.