Resumen

GERVACIO ARCINIEGA, J.J.; PROKHOROV, E.  y  ESPINOZA BELTRAN, F.J.. Propiedades ferroeléctricas de películas delgadas de GeSbTe. Rev. mex. fis. [online]. 2011, vol.57, n.2, pp.172-175. ISSN 0035-001X.

The aim of this work is to investigate and compare ferroelectrical properties of thin GeSbTe films with composition Ge₄Sb₁Te₅ (with well defined ferroelectrical properties) and Ge₂Sb₂Te₅ using impedance, optical reflection, XRD, DSC and Piezoresponse Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge₂Sb₂Te₅ films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezoresponse Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains.

Palabras llave : Ferroelectric; domains; capacitance; Curie-Weiss dependence.

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