Resumen

MOLINA VALDOVINOS, S  y  GUREVICH, Yu. G.. Hall effect: the role of nonequilibrium charge carriers. Rev. mex. fis. [online]. 2011, vol.57, n.4, pp.368-374. ISSN 0035-001X.

A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley-Read model), the expressions for the electrochemical potential of elec-trons and holes, Hall field and Hall constant R_H are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.

Palabras llave : Galvanomagnetic phenomena; bipolar semiconductors; recombination; Hall effect.

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