Resumen

IRSHAD AHAMED, M.; AHAMED, Mansoor; KUMAR, K. Sathish  y  SIVARANJANI, A.. Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots. Rev. mex. fis. [online]. 2022, vol.68, n.4, 041601.  Epub 19-Mayo-2023. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.68.041601.

Semiconductors with wide bandgaps play an important role in the use of optoelectronic and energy related devices due to their electron confinement, high optical transparency and tunable electrical conductivity. Therefore, in this study, the quantum confinement effect of chalcogenide semiconductor nanocrystals such as ZnS, ZnSe, ZnTe, SnS, SnSe and SnTe is studied using the Brus model (by effective mass approximation approach), the hyperbolic model and the cohesive energy model. The obtained results indicate that the value of the energy bandgap differs from the bulk crystals related to the quantum confinement effect. These verdicts confirm the quantum confinement effects of materials and their potential applications in optoelectronic devices. Theoretical findings are compared with the corresponding valid experimental data.

Palabras llave : Energy bandgap; chalcogenide; quantum dots; zinc; tin.