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Superficies y vacío
versión impresa ISSN 1665-3521
Resumen
GALVAN-ARELLANO, M. et al. Estudio de las películas de paladio como barreras de difusión para contactos ohmicos en semiconductores III-V. Superf. vacío [online]. 2005, vol.18, n.3, pp.13-16. ISSN 1665-3521.
A method for the formation of ohmic contacts on GaSb and GaAs with a palladium diffusion barrier is reported. The results on the analysis of the semiconductor surfaces after the cleaning process and previous to the metallic film contact deposition are included. The method for the palladium film deposition on GaSb and GaAs semiconductors is reported. The capability of the palladium films as a diffusion barrier is demonstrated by the results of SIMS analysis realized by on the semiconductor/palladium-film/metallic-alloy structures.
Palabras llave : SIMS; AFM; Ohmics contacts, Paladium, Diffusion barrier; Semiconductors III-V; GaAs; GaSb.