Resumen

MARTIN MOZO, J. Juan  y  MORA-RAMOS, Miguel E.. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: II. Antimonides and Phosphides. Nova scientia [online]. 2010, vol.2, n.4, pp.33-57. ISSN 2007-0705.

The sp³s^*d⁵ empirical tight-binding approach is used to study some properties of the electronic structure in a group of III-V zincblende semiconductors which are of most intersest to electronics and optoelectronics. Particularly, it is investigated the influence of [111] uniaxial strain upon these properties. We make use of a formulation outlined in the first part of this work [Mora-Ramos 2009]. Special attention is paid to the inclusion of the internal deformation effect. We present the variation of the Γ-, X- and L-related energy gaps and conduction band effective masses as functions of the uniaxial strain in the case of AlP, InP, AlSb, GaSb, and InSb. Fitting expressions for the main energy band gaps are reported for these five materials. A strong strain-induced non-linear behavior of these quantities as well as of the conduction band effective masses is observed.

Palabras llave : tight-binding; III-V materials; electronic structure; uniaxial strain.