Resumen

DIAGO-CISNEROS, L.  y  ARIAS-LASO, S.. Simultaneous hole scattering in a biased simple barrier. Nova scientia [online]. 2013, vol.5, n.10, pp.01-16. ISSN 2007-0705.

A theoretical analysis of the (heavy/light)-hole propagating fluxes through a simple barrier het erostructure of III-V semiconductors is developed considering an external perturbation. We include the interaction with an external electric field parallel to the direction of propagation -normal to the interfaces- in the Multicomponent Scattering Approach and study the relevant magnitudes -transmission, conductance and phase time- of hole quantum transport. This formalism allows us to deal with all propagating channels simultaneously. For the simple barrier system we study the dependence of the conductance with the applied bias through the different hole channels. We also analyze how the increasing of the in-plane momentum κ_τ affects the results, which provides an idea of how the band-coupling influences the transmission with applied bias. Additionally, a brief study of the phase transmission time curves is carried out as a function of the applied voltage in the heterostructure, fixing different values of the band mixing. Our results are successfully compared with some trends obtained previously in the hole tunneling through semiconductor heterostructures using different approaches to this applied here.

Palabras llave : Scattering; Hole tunneling; Multicomponent Scattering Approach.