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Superficies y vacío

versión impresa ISSN 1665-3521

Superf. vacío vol.18 no.3 Ciudad de México sep. 2005

 

Articles

Characterization by photoreflectance of E 0 ´ and E 1 silicon-like critical points in ion implanted Si 1-y C y thin films

M. Melendez-Lira* 

* Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 Mexico, D. F., México.


Abstract

The dependence of E0´ and E1 critical points energies with carbon content in Si1-yCy thin films grown by ion implantation and crystallization have been obtained by room temperature photoreflectance spectroscopy. We present results from samples crystallized by solid phase epitaxy and laser annealing. We found that the E0´ values depend on the crystallization procedure. For solid phase epitaxy crystallization, E0´ initially increases up to 20 meV for y=0.003 then decreasing to values near that of silicon for y =0.014. While for laser annealing the E0´ values are always lower than that of silicon. E0´ shows a behavior far from that predicted by the virtual crystal approximation and deformation potential theories. E1 shows a continuous increase as function of the carbon content, this is reasonably well described using the aforementioned theories.

Keywords: Semiconductor alloys; Si1-yCy; Photoreflectance

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References

[1] J.C. Bean, proceedings of IEEE 80, 571(1992), and references therein. [ Links ]

[2] H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns. J. Appl. Phys. 76, 1363 (1994). [ Links ]

[3] R.A. Soref, J. Appl. Phys. 70, 2470 (1991). [ Links ]

[4] J.B. Posthill, R.A. Rudder, S.V. Hattangady, G.G. Fountain and R.J. Markunas. Appl. Phys. Lett. 56, 734 (1990). [ Links ]

[5] S.S. Iyer, K. Eberl, M.S. Goorsky, F.K. LeGoues, J.C. Tsang and F. Cardone. Appl. Phys. Lett. 60, 356 (1992). [ Links ]

[6] J.W. Strane, H.J. Stein, S.R. Lee, B.L. Doyle and S.T. Picraux. Appl. Phys. Lett. 63, 2786 (1993). [ Links ]

[7] P. Boucaud, C. Francis, F.H. Julien, J.-M. Lourtioz, D. Bouchier, S. Bodnar, B. Lambert and J.L. Regolini. Appl. Phys. Lett. 64, 875 (1994). [ Links ]

[8] Z. Atzmon, A.E. Bair, E.J. Jaquez, J.W. Mayer, D. Chandrasekhar, D.J. Smith, R.L. Hervig and M. Robinson. Appl. Phys. Lett. 65, 2559 (1994). [ Links ]

[9] W. Faschinger, S. Zerlauth, G. Bauer and L. Palmetshofer. Appl. Phys. Lett. 67, 3933 (1995). [ Links ]

[10] J. Mi, P. Warren, P. Letourneau, M. Judelewicz, M. Gailhanou and M. Dutoit. Appl. Phys. Lett. 67, 259 (1995). [ Links ]

[11] J. Kolodzey, P.A. O'Neil, S. Zhang, B.A. Orner, K. Roe, K.M. Unruh, C.P. Swann, M.M. White and S.I. Shah. Appl. Phys. Lett. 67, 1865 (1995). [ Links ]

[12] M. Todd, P. Matsunaga, J. Kouvetakis, D. Chandrasekhar andD.J. Smith . Appl. Phys. Lett. 67, 1247 (1995). [ Links ]

[13] W. Kissinger, M. Weidner, H.J. Osten, and M. Eichler. Appl. Phys. Lett. 65, 3356 (1994). [ Links ]

[14] S. Zollner, C.M. Herzinger, J.A. Woollam, S.S. Iyer, A.P. Powell, andK. Eberl, Solid State Commun. 96, 305 (1995). [ Links ]

[15] K.M. Kramer, and M.O. Thompson. J. Appl. Phys. 79, 4118(1996). [ Links ]

[16] D.E. Aspnes, Surf. Sci. 37, 418(1973). [ Links ]

[17] R.J.C.S Sego, A.E. Bair, and T.L. Alford. Materials Chemistry and Physics 46, 283(1996) . [ Links ]

[18] M. Melendez-Lira, J. Menendez, K. M. Kramer, M. O. Thompson, N. Cave, R. Liu, J. W. Christiansen, N.D. Theodore, and J. J. Candelaria J. Appl. Phys. 82, 4246(1997). [ Links ]

[19] S. Zollner. J. Appl. Phys. 78, 5209(1995). [ Links ]

Received: July 10, 2005; Accepted: August 11, 2005

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