Resumen

ALVIDREZ-LECHUGA, A. et al. High-temperature dependence of low magnetization Mn₅Ge₃ phase formation of sputtered thin films. Superf. vacío [online]. 2017, vol.30, n.4, pp.61-64.  Epub 13-Oct-2020. ISSN 1665-3521.

We report on the high-temperature dependence of the Mn5Ge3 phase formation on Ge(001). High substrate temperatures from 650 to 850 °C lead to the formation of the Mn5Ge3 thin films with a low magnetization of ~250 kAm-1, which is an important characteristic for faster and low energy consumption of the switching of the magnetic orientation of magnetic thin films by spin-transfer torque. The highest temperature conducts to the formation of the Mn5Ge3 phase with only a small amount of Mn5Ge2 hexagonal clusters. Additionally, carbon doping of the Mn5Ge3 sample grown at 750 °C exhibits an enhancement of the Curie temperature from 296 K to 390 K. The growth mechanism corresponds to a Volmer-Weber mode.

Palabras llave : Mn₅Ge₃; C-doping; High-temperature growth; Low magnetization; Sputtering.