Resumo

RODRIGUEZ-MEZA, M.A.  e  CARRILLO, J.L.. Thermalization process of a photo-generated plasma in semiconductors. Rev. mex. fis. [online]. 2002, vol.48, n.1, pp.52-60. ISSN 0035-001X.

The kinetics of ultra-fast processes which leads to the thermalization condition of a photo-excited plasma in semiconductor systems is studied theoretically. We analyze the time evolution of a carrier population generated by a finite optical pulse, from the beginning of the pulse until the time in which the carrier population reaches a quasi-equilibrium condition. We calculate the energy fluxes caused by the main interaction mechanisms along the different stages the system passes through. Our analysis is done by using a set of non-linear rate equations which govern the time evolution of the carrier population in the energy space. We consider the main interaction mechanisms, including dynamic screening and phonon population effects.

Palavras-chave : Photo-excited plasma; thermalization; ultrafast processes in semiconductors.

        · resumo em Espanhol     · texto em Inglês     · Inglês ( pdf )