Investigación

 

Electronic and optical properties of InAs(110)

 

X. López-Lozano^a, C. Noguez^b*, and L. Meza-Montes^a

 

^a Instituto de Física, Universidad Autónoma de Puebla, Apartado Postal J-48, Puebla 72570, México

^bInstituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, Distrito Federal 01000, México

 

Recibido el 21 de junio de 2004;
aceptado el 10 de noviembre de 2004

 

Abstract

The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface.

Keywords: Surface reconstruction; surface states; reflectance anisotropy; differential reflectance; semiconductor surface; indium arsenide; III-V surface.

 

Resumen

Las propiedades (ópticas y electrónicas de la superficie InAs(110) se estudiaron usando el modelo de enlace fuerte y una base extendida tipo atómica. Se discute el carácter de los estados electrónicos asociados a la superficie y se comparan los resultados con otras aproximaciones teóricas y medidas experimentales. Se calculan las propiedades ópticas de la superficie y se analizan en términos del espectro de Reflectancia Anisoptrópica y de los estados electrónicos de superficie y de la estructura atómica.

Descriptores: Reconstrucción superficial; estados de superficie; reflectancia anisotrópica; reflectancia diferencial; superficie semiconductora; arsenuro de indio; superficie III-V.

 

PACS: 78.68.+m; 73.20.At; 78.55.Cr; 78.66.Fd

 

DESCARGAR ARTÍCULO EN FORMATO PDF

 

Acknowledgments

We gratefully acknowledge our useful discussion with Olivia Pulci and Rodolfo Del Sole from Universitá di Roma Tor Vergata, and Bernardo Mendoza from CIO. This work has been partly supported by DGAPA-UNAM grant No. IN104201, and CONACyT grants No. 36651-E and 36764-E.

 

Refereces

*. Author to whom correspondence should be addressed. E-mail: cecilia@fisica.unam.mx

1. Group III Nitride Semiconductors Compounds: Physics and Applications, edited by B. Gil (Oxford Science Publications, Great Britain, 1998).         [ Links ]

2. See for example, F. Bechstedt and R. Enderlein, Semiconductor Surfaces and Interfaces (Akademie-Verlag, Berlin, 1988);         [ Links ] A. Zangwill, Physics at Surfaces (Cambridge University Press, New York, 1992);         [ Links ] H. Lüth, Surfaces and Interfaces of Solids (Springer Verlag, Berlin, 1993).         [ Links ]

3. T.J. Godin, J.P. LaFemina, and C.B. Duke, J. Vac. Sci. Technol. A 10 (1992) 2059.         [ Links ]

4. O. Pulci, G. Onida, R. Del Sole, and A.J. Shkrebtii, Phys. Rev. B 58 (1998) 1922.         [ Links ]

5. O. Pulci, B. Adolph, U. Grossner, and F. Bechstedt, Phys. Rev. B 58 (1998) 4721.         [ Links ]

6. C. Noguez, Phys. Rev. B 58 (1998) 12641; ibid62 (2000) 2681.         [ Links ]

7. G. Cappellini, G. Satta, M. Palummo, and G. Onida, Phys. Rev. B 66 (2002) 115412.         [ Links ]

8. J.L. Alves, J. Hebenstreit and M. Sheffler, Phys. Rev. B 44 (1991) 6188.         [ Links ]

9. C. Mailhiot, C.B. Duke, and D.J. Chadi, Phys. Rev. B 31, 2213 (1985).         [ Links ]

10. R. P. Beres, R. E. Allen and J. D. Dow, Phys. Rev. B 26 (1982) 5207.         [ Links ]

11. B. Engels et al., Phys. Rev. B 58 (1998) 7799.         [ Links ]

12. A.I. Shkrebtii et al., Appl. Surf.Sci. 104/105, 176 (1996).         [ Links ]

13. C.B.M. Andersson, J.N. Andersen, P.E.S. Persson, and U.O. Karlsson, Phys. Rev. B 47 (1992) 2427.         [ Links ]

14. C.B.M. Andersson, J.N. Andersen, P.E.S. Persson and U.O. Karlsson, Surf. Sci. 398 (1998) 395.         [ Links ]

15. D.M. Swantson et al., Surf. Sci. 312 (1994) 361.         [ Links ]

16. D.M. Swantson et al., Can. J. Phys 70 (1992) 1099.         [ Links ]

17. H. W. Richter et al., J. Vac. Sci. Technol. B 4 (1986) 900.         [ Links ]

18. H. Carstensen, R. Claessen, R. Manzke, and M. Skibowski, Phys. Rev. B 41 (1990) 9880.         [ Links ]

19. W. Drube, D. Straub, and F.J. Himpsel, Phys. Rev. B35 (1987) 5563.         [ Links ]

20. W. Gudat and D.E. Eastman, J. Vac Sci. Technol. 13 (1976) 831.         [ Links ]

21. J. van Laar, A. Huiser, and T.L. van Rooy, J. Vac Sci. Technol. 14 (1977) 894.         [ Links ]

22. C. Mailhiot, C.B. Duke, and D.J. Chadi, Surf. Sci. 149 (1985) 366.         [ Links ]

23. C. B. Duke, A. Paton, A. Kahn, and C.R. Bonapace, Phys. Rev. B 27 (1983)6189.         [ Links ]

24. C. Noguez and S.E. Ulloa, Phys. Rev. B 53 (1996) 13138; and references therein.         [ Links ]

25. P. Vogl, H.P. Hjalmarson, and J.D. Dow, J. Phys. Chem. Solids 44 (1983) 365.         [ Links ]

26. J.-M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 57 (1998)6493.         [ Links ]

27. "Electronic Structure and the Properties of Solid", Walter A. Harrison (Dover Publications, Inc., New York, 1980).         [ Links ]

28. J.R. Chelikowsky and M.L. Cohen, Solid State Commun. 29 (1979) 267.         [ Links ]

29. M.S. Hybertsen and S.G. Louie, Phys. Rev. B 34 (1986) 5390;         [ Links ] ibid 38 (1988) 4033; F. Bechstedt and R. Del Sole, ibid 38 (1988) 7710; R. Godby, M. Schlüter, and L.J. Sham, ibid 37 (1988) 10159.