Resumo

YU, Z; ACEVES, M  e  CARRILLO, J. Optical sensitivity of Al/SRO/Si MOS diodes. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.54-56. ISSN 0035-001X.

In this work, the I-V characteristics of an Al/SRO/Si MOS-like diode under illumination were studied. A strongly illumination-dependent photocurrent was observed although the structure was opaque on both sides. The possible mechanisms that create the photocurrent were studied. We believe that the photo-carriers generated in a region surrounding the surface depletion layer dominate the photocurrent. The carriers generated by light in this region can diffuse into the depletion layer, and contribute to the photocurrent.

Palavras-chave : Silicon-rich oxide; MOS-like structure; photosensitive; optical sensor.