One step a–Si: H TFT'S with PECVD SiO_xN_y gate insulator

K.F. Albertin and I. Pereyra

LME, EPUSP, University of São Paulo, CEP 5424–970, CP61548, São Paulo, SP, Brazil.

Recibido el 27 de octubre de 2004
Aceptado el 26 de mayo de 2005

Abstract

Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO₂), silicon oxynitride (SiO_xN_y) and silicon nitride (Si₃N₄) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (I_ds vs. V_ds and I_ds vs. V_gs) measurements.

Keywords: One mask step; silicon oxynitride; thin film transistors.

Resumen

Son fabricados con apenas una etapa de fotolitografía transistores de capa fina de silicio amorfo utilizando, como material dieléctrico de compuerta, dióxido de silicio (SIO₂), oxinitruro de silicio (SiO_xN_y) y nitruro de silicio (Si₃N₄) crecidos por PECVD. Los dispositivos son caracterizados por medio de mediciones de corriente de dreno vs voltaje de dreno y corriente de dreno vs voltaje de compuerta (I_ds vs. V_ds y I_ds vs. V_gs)

Descriptores: fotolitográfica; oxinitruro de silicio; transistores de capa fina.

PACS: 72.80.Sk; 73.40 Qv

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Acknowledgments

The authors are grateful to Dr. Marco I.A. Cháves for his helpful discussion of the results. This work was financially supported by FAPESP (Process No 00/10027–3 and 03/02837–3) and CNPq.

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