Serviços Personalizados
Journal
Artigo
Indicadores
- Citado por SciELO
- Acessos
Links relacionados
- Similares em SciELO
Compartilhar
Revista mexicana de física
versão impressa ISSN 0035-001X
Rev. mex. fis. vol.53 supl.1 México Jan. 2007
Fabrication of low temperature polySi thin film transistor using field aided lateral crystallization process
Hyunwoong Changª, Hyunchul Kimª, YoungBae Kimb, Yuhang Wangc, and DuckKyun Choi ª, *
ª Department of Ceramic Engineering, Hanyang University, 17 Haengdangdong, Seongdongku, Seoul 133791, Korea.
b Physics Department, 110 Cox Hall 2700 Stinson Dr. Box 8202 Raleigh, NC 27695, USA.
c National Key Laboratory of Advanced Welding Production and Technology, Harbin Institute of Technology, Harbin 150001, China.
* Corresponding author:
duck@hanyang.ac.kr
Recibido el 9 de junio de 2006
Aceptado el 8 de septiembre de 2006
Abstract
Polycrystalline silicon thin film transistors (polySi TFTs) for LCD application were fabricated on glass substrate using the fieldaided lateral crystallization (FALC) process. The crystallization of amorphous silicon (aSi) was significantly enhanced when the electric field of 100V/cm was applied to selectively Nideposited aSi film during thermal annealing at 500° in N2 ambient for 5 hrs. The channel of the transistors was directionally crystallized from the negatively biased electrode side. The fieldeffect mobility of the fabricated polySi TFTs was about 200.5 cm2/Vs. Therefore, the possibility of highperformance and lowtemperature (<500°) polySi TFTs was demonstrated by using the NiFALC process.
Keywords: Field aided lateral crystallization; Ni catalyst; polycrystalline silicon thin film transistors; low temperature crystallization.
Resumen
Se fabricaron transistores de silicio policristalino de película delgada (TFTs poliSi) para aplicación LCD en sustrato de vidrio mediante un proceso de cristalización lateral asistida por campo (FALC). La cristalización de silicio amorfo (aSi) se reforzó significativamente cuando se aplicó un campo eléctrico de 100 V/cm a una película aSi con deposición selectiva de Ni durante recocido térmico a 500° en ambiente de N2 por 5 horas. El canal de los transistores se cristalizó directamente del lado del electrodo con sesgo negativo. La movilidad del efecto de campo del TFT poliSi fabricado era de 200.5 cm2/Vs. Por consiguiente, se comprobó la posibilidad de producir TFTs poliSi de alto rendimiento y baja temperatura (<500°) por medio del proceso NiFALC.
Descriptores: Cristalización lateral asistido por campo; nanocatalizador de Ni; transistores de película delgada de silicio policristalino; cristalización a baja temperatura.
PACS:73.61.Jc;81.10.Jt
DESCARGAR ARTÍCULO EN FORMATO PDF
Acknowledgment
This work was financially supported by the Korea Institute of Science and Technology Evaluation and Planning (KISTEP) through the National Research Laboratory (NRL) program. This work was also supported by a Korea Research Foundation Grant (KRF2004005D00167).
References
1. C.H. Tseng, T.K. Chang, F.T. Chu, J.M. Shieh, and B.T. Dai, IEEE 23 (2002) 333. [ Links ]
2. K. Sera et al., IEEE Trans. Electron Dev. 36 12 (1989) 2868. [ Links ]
3. T.J. Konno et al., Mat. Sci. Eng. A 1790 (1994) 426. [ Links ]
4. G. Radnoczi, J. Appl. Phys. 69 (1991) 6394. [ Links ]
5. G.A. Bhat et al., IEEE Electron Dev. Lett. 20 (1999) 97. [ Links ]
6. C. Hayzelden et al., J. Appl. Phys. 73 (1993) 8279. [ Links ]
7. H. Sehil, N.M. Rahmani, and F. Raoult, Mater. Chem. Phys. 42 (1995) 101. [ Links ]
8. T.H. Ihn, T.K. Kim, B.I. Lee, and S.K. Joo, Microelectron. Realiab. 39 (1999) 53. [ Links ]
9. Y. Kawazu, H.H. Kudo, S. Onari, and T. Arai, Jpn. J. Appl. Phys. 29 (1990) 2698. [ Links ]
10. K.S. Song, J.B. Lee, S.I. Jun, D.K. Choi, and S.K. Park, J. Mat. Sci. Lett. 18 (1999) 1209. [ Links ]
11. S.I. Jun, Y.H. Yang, J.B. Lee, and D.K. Choi, Appl. Phys. Lett. 75 (1999) 2235. [ Links ]