Serviços Personalizados
Journal
Artigo
Indicadores
- Citado por SciELO
- Acessos
Links relacionados
- Similares em SciELO
Compartilhar
Revista mexicana de física
versão impressa ISSN 0035-001X
Resumo
FLORES-MENA, J. E.; DIAZ-REYES, J. e BALDERAS-LOPEZ, J. A.. Structural properties of WO3 dependent of the annealing temperature deposited by hot-filament metal oxide deposition. Rev. mex. fis. [online]. 2012, vol.58, n.6, pp.504-509. ISSN 0035-001X.
In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO3 that has been grown by hot-filament metal oxide deposition (HFMOD). The chemical stoichiometry was determined by X-ray Photoelectron Spectroscopy (XPS). By X-ray diffraction obtained that the as-deposited WO3 films present mainly monoclinic crystalline phase. WO3 optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO3 from 100 to 500°C. The Raman spectrum of the as-deposited WO3 film shows four intense peaks that are typical Raman peaks of crystalline WO3 (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching (v) and W-O bending (δ) modes, respectively, which enhanced and increased their intensity with the annealing temperature.
Palavras-chave : Electrochromic semiconductor; WO3; physical properties.