Resumo

SAAVEDRA-GOMEZ, H. J. et al. A simple de-embedding method for on-wafer RF CMOS FET using two microstrip lines. Rev. mex. fis. [online]. 2013, vol.59, n.6, pp.570-576. ISSN 0035-001X.

This letter deals with the de-embedding of on-wafer CMOS FETs embedded in symmetrical and reciprocals pads. A de-embedding method, that uses a calibrated vector network analyzer and two microstrip lines fabricated on a lossy SiO₂-Si substrate, is introduced. The proposed method not only allows the characterization on the interconnection lines but also allows the characterization of the CMOS pads. Our results demonstrate that a shunt admittance does not suffice to properly model CMOS pads. Experimental S-parameters data of on-wafer CMOS FETs de-embedded with the proposed L-L method, Mangan and the Pad-Open-Short De-embedded (PSOD) methods are compared. The S-parameter data, de-embedded with the PSOD and the proposed two-tier L-L show high correlation, validating the proposed de-embedding method.

Palavras-chave : Electrical measurement; microwave circuits; field effect devices; high speed techniques.

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