Resumo

OUBRAM, O.; RODRIGUEZ-VARGAS, I.  e  MARTINEZ-OROZCO, J. C.. Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure. Rev. mex. fis. [online]. 2014, vol.60, n.2, pp.161-167. ISSN 0035-001X.

The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in δ-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities.

Palavras-chave : Refractive index changes linear and nonlinear; hydrostatic pressure; δ-doped quantum wells.

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