Resumo

HERNANDEZ-COCOLETZI, H.; CONTRERAS-SOLORIO, D. A.; MADRIGAL-MELCHOR, J.  e  ARRIAGA, J.. Transición electrónica fundamental en pozos cuánticos GaN/InGaN/GaN con estructura de zincblenda. Superf. vacío [online]. 2006, vol.19, n.3, pp.12-15. ISSN 1665-3521.

In this work we calculate the transition energy from the first level of holes to the first level of electrons (1h-1e) for cubic GaN/In_xGa_1-xN/GaN quantum wells. We employ the empirical tight binding approach with an sp³s* orbital basis, nearest neighbors interactions and the spin-orbit coupling, together with the surface Green function matching method. We obtain the tight binding parameters of the alloy from those of the binary compounds GaN and InN using the virtual crystal approximation. We study the transition energy behavior varying the well width for x=0.1 and x=0.2, using several values for the band offset and for two sets of exponent values used in the tight-binding parameters scaling rule when we take into account the strain in the well.

Palavras-chave : Quantum wells; Electronic states; Alloys.

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