Resumo

PACIO, M. et al. Estudio y modelado de la interfase Si-SiO₂, usando estructuras MOS. Superf. vacío [online]. 2009, vol.22, n.4, pp.10-14. ISSN 1665-3521.

Starting from the theory of generation-recombination of Shockley-Read-Hall process, a minority carrier generation model at interface Si-SiO2 from metal-oxide-semiconductor (MOS) structure is developed. Experimental generation curves of the MOS structures, made with silicon oxides deposited by atmospheric pressure chemical vapor deposition (APCVD) technique were obtained. It is shown that generation curves can exhibit a no-lineal increase in the generation rate and it depended on the initial conditions of polarization. This effect was attributed to the contribution of the surface generation in the generation process. From the proponed model and experimental generation curves, the interface trap density, emission coefficient and the activation energy, that characterize the traps at interface, are calculated.

Palavras-chave : Si-SiO₂ interface; MOS structure; APCVD system; Shockley-Read-Hall generation; Zerbst curves.