Resumo

PACIO, M. et al. Características de películas de SiOF obtenidas por APCVD con HF como fuente de flúor. Superf. vacío [online]. 2010, vol.23, n.4, pp.05-08. ISSN 1665-3521.

Fluorinated silicon oxide (SiOF) films were obtained in a conventional atmospheric pressure chemical vapor deposition (APCVD) reactor, using tetraethoxysilane (TEOS) and ozone (O₃) as precursor of SiO₂, and the fluorhydric anhydride was used for incorporation of fluorine atoms. The SiOF films were deposited changing the temperature of the substrate in the range of 200 to 275 °C. The chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and the refractive index by ellipsometry. FTIR absorption spectra of the films deposited show the vibration mode corresponding to Si-F bonds and its intensity depend of the deposit temperature and of the atoms concentration. The incorporation of fluorine has a contribution in the reduction of the refractive index of SiOF films, which decrease of 1.46 to 1.35. Therefore, the main mechanism responsible for the reduction of the refractive index is the porosity, generated by the incorporation of the fluorine atom in the network. Dielectric constant was reduced of 4.2, that corresponding to SiO₂ films, to values in the range of 3.18 to 3.6 for SiOF films by APCVD technique.

Palavras-chave : APCVD system; SiOF films; TEOS; FTIR spectroscopy; SIMS.

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