Resumo

JIMENEZ-FERNANDEZ, V.M. et al. Descripción del modelo eléctrico del memristor. Rev. mex. fís. E [online]. 2012, vol.58, n.2, pp.113-119. ISSN 1870-3542.

The physical realization of memristor, achieved by the Hewlett Packard Laboratories in 2008, has become this novel device into an important topic under study in the Electronics Engineering area. However, in spide of the existence of several papers, theses, book chapters, and technical reports about this topic found in databases, it is unfortunate the lack of references written in spanish and furthermore references that approach it under a perspective which let an easy understanding with the only academic background requirement of basic concepts of electromagnetism. Taking in account this fact as motivation, this paper emerges with the objective of being an introductory reference for undergraduate students in Physics, Electrical Engineering or Electronics Engineering that could be interested in beginning a study about the memristor electrical model. The model proposed by Hewlett-Packart has been taken as reference and its verification has been performed through Maple Realease 13.0 and PSpice simulations.

Palavras-chave : Memristor; electrical model; VI curve; memristance.