Resumo

DOMINGUEZ, M.; ROSALES, P.  e  TORRES, A.. Electrical characterization of planarized a-SiGe:H Thin-film Transistors. Rev. mex. fis. [online]. 2013, vol.59, n.1, pp.62-65. ISSN 0035-001X.

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200°C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 10⁶ and off-current approximately of 0.3 × 10^-12 A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented.

Palavras-chave : Thin-film transistor; hydrogenated amorphous silicon-germanium; low-temperature; spin-on glass; spice.