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Revista mexicana de física
versão impressa ISSN 0035-001X
Rev. mex. fis. vol.61 no.4 México Jul./Ago. 2015
Investigación
Refractive index expressions for Ga1-xlnxAs, GaAs1-xNx and Ga1-xlnxNyAs1-y alloys
J.A. Martínª and M. Sánchezb
ª Facultad de Ciencias Técnicas, Universidad de Ciego de Ávila, Carretera a Morón Km 9(1/2), Ciego de Ávila, Cuba. e-mail: jamartin@unica.cu
bFacultad de Física, Universidad de La Habana, San Lázaro y L., Vedado, 10400, La Habana, Cuba.
Received 8 December 2014.
Accepted 21 April 2015.
Abstract
An expression suitable to estimate the refractive index of Ga1-xlnxAs, GaAs1-xNx and Ga1-xlnxNyAs1-y with 0 ≤ x ≤ 0.4 and 0 ≤ y ≤ 0.04 for band gap energies from 0.8 to 1.1 eV is presented. In case of Ga1-xlnxAs, an improved expression, which shows better agreement with experimental data than previously reported expression, is proposed.
Keywords: GalnNAs; GaAsN; diluted nitrides semiconductors; refractive index; optical properties.
PACS: 78.20.Ae; 78.20.Bh; 78.20.Ci
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