Investigación

 

Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

 

M.A. Dominguez-Jimenez^a*, F. Flores-Gracia^a, A. Luna-Flores^a, J. Martinez-Juarez^a, J.A. Luna-Lopez^a, S. Alcantara-Iniesta^a, P. Rosales-Quintero^b and C. Reyes-Betanzo^b

 

^a Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, 72570, México. * Tel/Fax: (52)(222) 229-55-00 Ext 7876 e-mail: madominguezj@gmail.com.

^b National Institute for Astrophysics, Optics and Electronics, Electronics Department, Luis Enrique Erro No. 1, Puebla, Z.P. 72840, Mexico.

 

Received 7 August 2014;
accepted 30 January 2015

 

Abstract

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO₂ on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.

Keywords: ZnO; electrical properties; thin film transistors.

 

PACS: 85.30.Tv; 85.30.De

 

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