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Superficies y vacío
versión impresa ISSN 1665-3521
Superf. vacío vol.18 no.2 Ciudad de México jun. 2005
Articles
Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots
*Instituto de Investigación en Comunicación Óptica and Facultad de Ingeniería, Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Lomas 4ª. Sección, San Luis Potosí, San Luis Potosí, México. 78210.
**Physics Department, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional. Apartado Postal 14470, México, D.F., México.
We studied the growth of self-assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in-situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4-shutter closed. The exposure of GaAs at high temperature leads to the formation of nanometric scale pits plus a Ga-rich surface. The annealing modifies in such a way the GaAs surface that the strain mediated transition from two- to three -dimensional InAs growth takes place at a much larger InAs thickness than the obtained under standard conditions. Moreover, the resulting QDs obtained at the equivalent InAs thickness of 3.4 monolayers (MLs) on the annealed GaAs surfaces presented a smaller size dispersion as compared with the conventionally grown QDs. The photoluminescence (PL) emission spectra corresponding to the samples subjected to the in-situ thermal treatment observed a reduction in the full width at half medium (FWHM) and a clear correlation between the dots size increase and the emission peak red-shift. The new-flanged nucleation propitiated by the annealing process was explained in terms of a generation of an intermediated InGaAs thin film created by Ga-clusters on an atomically rough surface and the impinging In atoms.
Keywords: Nanostructures; Quantum dots; Molecular beam epitaxy; Semiconducting III-V materials
Acknowledgments
The authors would like to express their thanks to the technical staff members: N. Saucedo-Zeni, B.E. Torres-Loredo and R. Fragoso. This work was partially supported by CONACyT-Mexico, FAI-UASLP, PROMEP-SESIC.
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Received: April 01, 2005; Accepted: May 11, 2005
This is an open-access article distributed under the terms of the Creative Commons Attribution License
