Grown of CdTe:Eu films by pulsed laser deposition

 

M. Zapata-Torres^1*, M. González-Alcudia², M. Meléndez-Lira³, O. Calzadilla Amaya⁴

 

¹ CICATA-IPN Unidad Legaria, Legaria 694 Col. Irrigación, C.P. 11500, Del. Miguel Hidalgo México Distrito Federal, * mzapatat@ipn.mx

² CICATA-IPN Unidad Altamira, Km. 14.5 Carretera. Tampico-Puerto Industrial 89600, Altamira, Tamps. México

³ Departamento de Física, CINVESTAV-IPN Unidad México, Apdo. Postal 14-740, 07000, México, D.F.

⁴ IMRE- Facultad de Física, Universidad de la Habana, San Lázaro y I. Vedado 10400, Habana Cuba

 

Recibido: 4 de octubre de 2006.
Aceptado: 16 de noviembre de 2006.

 

Abstract

CdTe:Eu films were grown by the pulsed laser deposition method on glass substrates. The targets were prepared with three different concentrations of Cd, Te and Eu employing CdTe and EuTe powders, homogenized by ball milling. X-ray diffraction measurements showed that the samples grown with a mixture of phases related with the structure of CdTe and EuTe, with a little increase of the lattice parameter. Scanning Electron micrographs revealed that CdTe:Eu films presented a texture similar to solidified drops. Optical transmission spectroscopy was used for determinate the band gap of samples. Raman spectroscopy results shown broadening of Raman features associated with the structure of CdTe and EuTe with nominal Eu content.

Keywords: Rare earth; CdTe; Pulsed laser deposition modified technique.

 

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