Resumen

DE MOURE-FLORES, F. et al. SnO₂:F thin films deposited by RF magnetron sputtering: effect of the SnF₂ amount in the target on the physical properties. Rev. mex. fis. [online]. 2013, vol.59, n.4, pp.335-338. ISSN 0035-001X.

SnO₂:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF₂ as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500°C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO₂ and SnO. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO₂ thin films grown with small SnF₂ content in the target can be considered as candidates for transparent electrodes.

Palabras llave : F-doped tin oxide; transparent conducting oxide; RF magnetron sputtering; transparent electrodes.

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